HP8MA2TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 18A, 10V, 17.9m Ω @ 15A, 10V

DS Breakdown Voltage-Min :

30V

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

48A

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

11 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Ta 15A Ta

Power - Max :

3W Ta

Terminal Form :

Flat

Factory Lead Time :

16 Weeks

Number of Terminations :

6

JESD-30 Code :

R-PDSO-F6

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

22nC, 25nC @ 10V

Number of Elements :

2

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

N and P-Channel

Drain-source On Resistance-Max :

0.0165ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

1100pF 1250pF @ 15V

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Case Connection :

DRAIN

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant