HN2C01FEYTE85LF

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Mfr.Part #
HN2C01FEYTE85LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS 2NPN 50V 0.15A ES6
Stock
4,330
In Stock :
4,330

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Published :
2014
Packaging :
Cut Tape (CT)
Mount :
Surface Mount
Element Configuration :
Dual
Collector Emitter Breakdown Voltage :
50V
Gain Bandwidth Product :
60MHz
Operating Temperature :
150°C TJ
RoHS Status :
RoHS Compliant
Package / Case :
SOT-563, SOT-666
Emitter Base Voltage (VEBO) :
5V
Polarity :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 6V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
hFE Min :
120
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Saturation Voltage :
100mV
Collector Emitter Voltage (VCEO) :
250mV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
60V
Transistor Type :
2 NPN (Dual)
Max Power Dissipation :
100mW
Power - Max :
100mW
Mounting Type :
Surface Mount
Max Breakdown Voltage :
50V
Max Collector Current :
150mA
Datasheets
HN2C01FEYTE85LF
Introducing Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:SOT-563, SOT-666, Mounting Type:Surface Mount, HN2C01FEYTE85LF pinout, HN2C01FEYTE85LF datasheet PDF, HN2C01FEYTE85LF amp .Beyond Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation HN2C01FEYTE85LF


HN2C01FEYTE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at

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