HN2A01FE-GR(TE85LF

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Mfr.Part #
HN2A01FE-GR(TE85LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
TRANS 2PNP 50V 0.15A ES6
Stock
16,394
In Stock :
16,394

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Arrays
Packaging :
Tape and Reel (TR)
Voltage - Collector Emitter Breakdown (Max) :
50V
Package / Case :
SOT-563, SOT-666
Current - Collector (Ic) (Max) :
150mA
Transistor Type :
2 PNP (Dual)
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA 6V
Power - Max :
100mW
Operating Temperature :
150°C TJ
Published :
2014
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
800MHz
Introducing Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN2A01FE-GR(TE85LF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, HN2A01FE-GR(TE85LF pinout, HN2A01FE-GR(TE85LF datasheet PDF, HN2A01FE-GR(TE85LF amp .Beyond Transistors - Bipolar (BJT) - Arrays Toshiba Electronic Devices and Storage Corporation HN2A01FE-GR(TE85LF ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation HN2A01FE-GR(TE85LF


HN2A01FE-GR(TE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at

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