HGTP7N60B3D
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- Mfr.Part #
- HGTP7N60B3D
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 14A 60W TO220AB
- Stock
- 37,127
- In Stock ：
- 37,127
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Reverse Recovery Time :
- 37ns
- Power Dissipation :
- 60W
- Mount :
- Through Hole
- Packaging :
- Tube
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 600V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 600V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 56A
- Test Condition :
- 480V, 7A, 50 Ω, 15V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 7A
- Base Part Number :
- HGTP7N60
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 60W
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 14A
- Mounting Type :
- Through Hole
- Gate Charge :
- 23nC
- Switching Energy :
- 160μJ (on), 120μJ (off)
- Collector Emitter Saturation Voltage :
- 1.8V
- Current Rating :
- 14A
- Weight :
- 1.8g
- Td (on/off) @ 25°C :
- 26ns/130ns
- Datasheets
- HGTP7N60B3D
HGTP7N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGTP7N60B3D Description
MOS gated high voltage switching devices like the HGTP7N60B3D combine the greatest features of MOSFETs and bipolar transistors. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. At rated current, the substantially lower on-state voltage drop fluctuates only marginally between 25oC and 150oC. TA49190 is the developmental type of the IGBT.
HGTP7N60B3D Features
?Ratio of Short Circuits
?Low Loss Conductivity
?An ti-Parallel Hyperfast Diode
HGTP7N60B3D Applications
Controls for AC and DC motors
energy sources
solenoid controllers
Contactors and relays are two types of contactors.
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