HGTP7N60A4D
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- Mfr.Part #
- HGTP7N60A4D
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 34A 125W TO220AB
- Stock
- 15,718
- In Stock ：
- 15,718
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Power - Max :
- 125W
- Packaging :
- Tube
- Reverse Recovery Time :
- 34ns
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 7A
- Switching Energy :
- 55µJ (on), 60µJ (off)
- Base Part Number :
- HGTP7N60
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Test Condition :
- 390V, 7A, 25 Ω, 15V
- Mounting Type :
- Through Hole
- Gate Charge :
- 37nC
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Td (on/off) @ 25°C :
- 11ns/100ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Pulsed (Icm) :
- 56A
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 34A
- Datasheets
- HGTP7N60A4D
HGTP7N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGTP7N60A4D Description
The HGTP7N60A4D devices combine the greatest qualities of MOSFETs and bipolar transistors in a MOS-gated high voltage switching device. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly.
HGTP7N60A4D Features
? Operation At >100kHz At 390V, 7A
? Operation At 200kHz At 390V, 5A
? Capability for 600V Switching SOA
? Typical Fall Time.......................................
? Minimal Conductance Loss
HGTP7N60A4D Applications
Switching applications
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