HGTP7N60A4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 7A

Height :

9.02mm

Package / Case :

TO-220-3

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Td (on/off) @ 25°C :

11ns/100ns

Mounting Type :

Through Hole

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

205 ns

Power Dissipation :

125W

JEDEC-95 Code :

TO-220AB

Base Part Number :

HGTP7N60

Pbfree Code :

yes

Factory Lead Time :

44 Weeks

Turn-Off Delay Time :

100 ns

Transistor Element Material :

SILICON

Width :

4.57mm

Switching Energy :

55µJ (on), 60µJ (off)

Test Condition :

390V, 7A, 25 Ω, 15V

ECCN Code :

EAR99

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Length :

10.28mm

Collector Emitter Saturation Voltage :

1.9V

Turn On Delay Time :

11 ns

Voltage - Rated DC :

600V

Turn On Time :

17 ns

HTS Code :

8541.29.00.95

Current - Collector Pulsed (Icm) :

56A

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

34A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Input Type :

Standard

Current Rating :

34A

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V

Published :

2003

Max Power Dissipation :

125W

Transistor Application :

POWER CONTROL

Mount :

Through Hole

Gate Charge :

37nC

Packaging :

Tube

Weight :

1.8g

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1