HGTP3N60A4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

40A

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

4 Weeks

Test Condition :

390V, 3A, 50 Ω, 15V

Voltage - Rated DC :

600V

Length :

10.28mm

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 3A

Rise Time :

11ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

180 ns

Packaging :

Tube

Width :

4.57mm

Mounting Type :

Through Hole

Max Collector Current :

17A

Power Dissipation :

70W

Input Type :

Standard

Height :

9.02mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Additional Feature :

LOW CONDUCTION LOSS

Fall Time-Max (tf) :

100ns

Collector Emitter Saturation Voltage :

2.05V

HTS Code :

8541.29.00.95

Gate Charge :

21nC

JEDEC-95 Code :

TO-220AB

Transistor Application :

POWER CONTROL

Number of Elements :

1

Weight :

1.8g

Turn On Time :

17.5 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Pins :

3

Td (on/off) @ 25°C :

6ns/73ns

Mount :

Through Hole

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Max Power Dissipation :

70W

Operating Temperature :

-55°C~150°C TJ

Current Rating :

17A

Gate-Emitter Thr Voltage-Max :

7V

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-220-3

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Switching Energy :

37μJ (on), 25μJ (off)

Lead Free :

Lead Free