HGTD7N60C3S9A

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 7A

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

14A

Additional Feature :

LOW CONDUCTION LOSS

Power Dissipation :

60W

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

44 Weeks

Switching Energy :

165μJ (on), 600μJ (off)

Operating Temperature :

-40°C~150°C TJ

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Max Power Dissipation :

60W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

56A

JESD-609 Code :

e3

Weight :

260.37mg

Terminal Form :

Gull wing

Number of Pins :

3

Current Rating :

14A

Gate Charge :

23nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.6V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

490 ns

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Collector Emitter Voltage (VCEO) :

600V

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Number of Elements :

1

Voltage - Rated DC :

600V

Turn On Time :

20 ns

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes