HBDM60V600W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

80V

Frequency :

100MHz

JESD-609 Code :

e3

Max Breakdown Voltage :

60V

Continuous Collector Current :

500mA

Max Power Dissipation :

200mW

Radiation Hardening :

No

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

100MHz

hFE Min :

50

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Weight :

6.010099mg

Number of Elements :

2

Element Configuration :

Dual

Mounting Type :

Surface Mount

Height :

1mm

Polarity :

NPN, PNP

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

400mV

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Collector Emitter Breakdown (Max) :

65V 60V

Gain Bandwidth Product :

100MHz

Transistor Type :

NPN, PNP

Emitter Base Voltage (VEBO) :

6V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA

Factory Lead Time :

19 Weeks

Length :

2.2mm

Collector Emitter Breakdown Voltage :

60V

Power Dissipation :

200mW

Max Collector Current :

600mA

Current - Collector (Ic) (Max) :

500mA 600mA

Collector Emitter Saturation Voltage :

-500mV

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V / 100 @ 150mA 10V

Pin Count :

6

Width :

1.35mm

Terminal Form :

Gull wing

Mount :

Surface Mount

Base Part Number :

HBDM60V600