HAT2092R-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2005

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Transistor Element Material :

SILICON

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Lead Free :

Lead Free

Rise Time :

17ns

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

16m Ω @ 5.5A, 10V

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

11A

Number of Pins :

8

Power - Max :

3W

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

15 ns

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.025Ohm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Fall Time (Typ) :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

20