H7N1002LSTL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10m Ω @ 37.5A, 10V

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

9700pF @ 10V

Vgs (Max) :

±20V

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

TIN BISMUTH

Power Dissipation-Max :

100W Tc

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.015Ohm

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

300A

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Mount :

Surface Mount

Continuous Drain Current (ID) :

75A

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

250

Pin Count :

4

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

SC-83

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Ta

JESD-609 Code :

e6