H7N1002LS-E

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Mfr.Part #
H7N1002LS-E
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SC-83
Datasheet
Download
Description
MOSFET N-CH 100V 75A 4LDPAK
Stock
3,573
In Stock :
3,573

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Supplier Device Package :
4-LDPAK
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Operating Temperature :
150°C TJ
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
75A Ta
Package / Case :
SC-83
Rds On Max :
10 MΩ
Packaging :
Tape and Reel (TR)
Input Capacitance :
9.7nF
Power Dissipation-Max :
100W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
10mOhm @ 37.5A, 10V
FET Type :
N-Channel
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Published :
2006
Continuous Drain Current (ID) :
75A
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
9700pF @ 10V
Factory Lead Time :
16 Weeks
Number of Elements :
1
Power Dissipation :
100W
Datasheets
H7N1002LS-E
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) H7N1002LS-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:SC-83, Mounting Type:Surface Mount, Number of Pins:3, H7N1002LS-E pinout, H7N1002LS-E datasheet PDF, H7N1002LS-E amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) H7N1002LS-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) H7N1002LS-E


N-Channel Tape & Reel (TR) 10mOhm @ 37.5A, 10V ±20V 9700pF @ 10V 155nC @ 10V 100V SC-83

H7N1002LS-E Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9700pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

H7N1002LS-E Features


a continuous drain current (ID) of 75A
a 100V drain to source voltage (Vdss)


H7N1002LS-E Applications


There are a lot of Renesas Electronics America
H7N1002LS-E applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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