GT50N322A

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-3P-3, SC-65-3

Minimum Operating Temperature :

- 55 C

Series :

-

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 60A

Test Condition :

-

Transistor Application :

POWER CONTROL

Supplier Device Package :

TO-3P(N)

Case Connection :

COLLECTOR

Terminal Position :

Single

Switching Energy :

-

JESD-30 Code :

R-PSFM-T3

Subcategory :

IGBTs

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Current - Collector Pulsed (Icm) :

120 A

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Operating Temperature :

150°C (TJ)

Package Shape :

RECTANGULAR

Factory Lead Time :

12 Weeks

RoHS :

Details

Current - Collector (Ic) (Max) :

50 A

Number of Elements :

1

Collector-Emitter Voltage-Max :

1000 V

Power - Max :

156 W

Package :

Tube

Product Status :

Active

Reverse Recovery Time (trr) :

800 ns

Number of Terminals :

3

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

-

Brand :

Toshiba

Technology :

Si

Mounting Style :

Through Hole

Product Category :

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max) :

1000 V

Packaging :

Tube

Manufacturer :

Toshiba

Product Type :

IGBT Transistors

Pin Count :

3

Reach Compliance Code :

Unknown

Configuration :

Single

Surface Mount :

No

Collector Current-Max (IC) :

50 A

Input Type :

Standard

IGBT Type :

-