GT40QR21(STA1,E,D

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Radiation Hardening :

No

Mounting Style :

Through Hole

Power - Max :

230 W

Base Product Number :

GT40QR21

Subcategory :

IGBTs

IGBT Type :

-

Td (on/off) @ 25°C :

-

Product Status :

Active

Power Dissipation :

230

Packaging :

Tube

Operating Temperature :

175°C (TJ)

Series :

GT40QR21

Supplier Device Package :

TO-3P(N)

Mount :

Through Hole

Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 40A

Package / Case :

TO-3PN-3

Collector Emitter Saturation Voltage :

1.5

RoHS :

Compliant

Number of Pins :

3

Min Operating Temperature :

-55 °C

Max Collector Current :

40 A

Minimum Operating Temperature :

- 55 C

Switching Energy :

-, 290µJ (off)

Product Category :

IGBT Transistors

Continuous Collector Current :

40

Package :

Tube

Technology :

Si

Element Configuration :

Single

Test Condition :

280V, 40A, 10Ohm, 20V

Reverse Recovery Time (trr) :

600 ns

Mounting Type :

Through Hole

Manufacturer :

Toshiba

Max Operating Temperature :

175 °C

Maximum Operating Temperature :

+ 175 C

Current - Collector Pulsed (Icm) :

80 A

Current - Collector (Ic) (Max) :

40 A

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Brand :

Toshiba

Product Type :

IGBT Transistors

Collector Emitter Voltage (VCEO) :

1.2 kV