GT105N10K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

83W (Tc)

Supplier Device Package :

TO-252

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

1574 pF @ 50 V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

FET Feature :

-

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Technology :

MOSFET (Metal Oxide)

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 35A, 10V

FET Type :

N-Channel