GT1003D

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

2W

Drain to Source Voltage (Vdss) :

100 V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A

Series :

-

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

212 pF @ 50 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

130mOhm @ 3A, 10V

Vgs (Max) :

±20V

Product Status :

Active

Supplier Device Package :

SOT-23-3L

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

5.2 nC @ 10 V