GP2T080A120U

Manufacturer :

SemiQ

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Rise Time :

6 ns

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

58 nC @ 20 V

Vgs (Max) :

+25V, -10V

Subcategory :

MOSFETs

Channel Mode :

Enhancement

FET Type :

N-Channel

Brand :

SemiQ

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

1377 pF @ 1000 V

Power Dissipation (Max) :

188W (Tc)

Packaging :

Tube

Number of Channels :

1 Channel

Product Type :

MOSFET

Package :

Tube

Manufacturer :

SemiQ

Supplier Device Package :

TO-247-3

Rds On (Max) @ Id, Vgs :

100mOhm @ 20A, 20V

Package / Case :

TO-247-3

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

Base Product Number :

GP2T080A

Drain to Source Voltage (Vdss) :

1200 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 10mA

Series :

-

Mounting Type :

Through Hole

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Product Category :

MOSFET