GP2T080A120H

Manufacturer :

SemiQ

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

4 ns

Manufacturer :

SemiQ

Input Capacitance (Ciss) (Max) @ Vds :

1377 pF @ 1000 V

Product Type :

MOSFET

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Series :

-

FET Feature :

-

Vgs (Max) :

+25V, -10V

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Rds On (Max) @ Id, Vgs :

100mOhm @ 20A, 20V

Vgs(th) (Max) @ Id :

4V @ 10mA

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

1200 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

61 nC @ 20 V

Package :

Tube

Base Product Number :

GP2T080A

Channel Mode :

Depletion

Drive Voltage (Max Rds On, Min Rds On) :

20V

Subcategory :

MOSFETs

Product Category :

MOSFET

FET Type :

N-Channel

Transistor Polarity :

N-Channel

Packaging :

Tube

RoHS :

Details

Power Dissipation (Max) :

188W (Tc)

Supplier Device Package :

TO-247-4

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-247-4

Brand :

SemiQ

Mounting Style :

Through Hole