GC11N65K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

901 pF @ 50 V

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

TO-252

Mounting Type :

Surface Mount

FET Type :

N Channel

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Power Dissipation-Max (Ta=25°C) :

78W Tc

Drain to Source Voltage (Vdss) :

650V

Rds On (Max) @ Id, Vgs :

360mΩ @ 5.5A,10V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Series :

-

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250uA

Package / Case :

TO-252

Technology :

MOSFET (Metal Oxide)

Power Dissipation (Max) :

78W (Tc)

Continuous Drain Current (Id) @ 25°C :

11A Tc

Packaging :

Tape and Reel (TR)