GC11N65M

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package :

TO-263

Rds On (Max) @ Id, Vgs :

360mOhm @ 5.5A, 10V

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Series :

-

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation (Max) :

78W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

768 pF @ 50 V

FET Feature :

-

Product Status :

Active

Vgs (Max) :

±30V