GC11N65T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Package / Case :

TO-220

FET Feature :

-

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N Channel

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

901 pF @ 50 V

Supplier Device Package :

TO-220

Vgs(th) (Max) @ Id :

4V @ 250uA

Package :

Tube

Rds On (Max) @ Id, Vgs :

360mΩ @ 5.5A,10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation-Max (Ta=25°C) :

78W Tc

Product Status :

Active

RoHS Status :

RoHS Compliant

Continuous Drain Current (Id) @ 25°C :

11A Tc

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

650V

Packaging :

Tube-packed

Power Dissipation (Max) :

78W (Tc)

Vgs (Max) :

±30V