G3R40MT12J

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

374W (Tc)

Technology :

SiCFET (Silicon Carbide)

Channel Type :

N Channel

Series :

G3R™

Product Status :

Active

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

15V

Drain to Source Voltage (Vdss) :

1200 V

Input Capacitance (Ciss) (Max) @ Vds :

2929 pF @ 800 V

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Package :

Tube

Continuous Drain Current Id :

75A

Transistor Polarity :

N-Channel

Vgs (Max) :

±15V

Gate Charge (Qg) (Max) @ Vgs :

106 nC @ 15 V

Rds On (Max) @ Id, Vgs :

48mOhm @ 35A, 15V

Base Product Number :

G3R40

FET Type :

N-Channel

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 175 C

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Operating Temperature :

-55°C ~ 175°C (TJ)

Supplier Device Package :

TO-263-7

Vgs(th) (Max) @ Id :

2.69V @ 10mA

Number of Channels :

1 Channel

Power Dissipation :

374W

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)