G3R40MT12D

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Supply :

3.135 V ~ 3.465 V

Differential - Input:Output :

Yes/Yes

Power Dissipation (Max) :

333W (Tc)

Series :

--

Input Capacitance (Ciss) (Max) @ Vds :

2929 pF @ 800 V

Channel Mode :

Enhancement

Maximum Operating Temperature :

+ 175 C

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

15V

PLL :

yes

Ratio - Input:Output :

1:8

Current - Continuous Drain (Id) @ 25°C :

71A (Tc)

Power Dissipation :

333W

FET Type :

N-Channel

Main Purpose :

PCI Express (PCIe)

Base Product Number :

G3R40

Rds On (Max) @ Id, Vgs :

48mOhm @ 35A, 15V

Technology :

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss) :

1200 V

Output :

Clock

Number of Channels :

1 Channel

Input :

Clock

Product Status :

Active

FET Feature :

-

Package / Case :

48-TFSOP (0.240, 6.10mm Width)

Number of Circuits :

1

Channel Type :

N Channel

Continuous Drain Current Id :

71A

Package :

Tube

Vgs (Max) :

±15V

Transistor Polarity :

N-Channel

Supplier Device Package :

48-TSSOP

Vgs(th) (Max) @ Id :

2.69V @ 10mA

Frequency - Max :

220MHz

Operating Temperature :

0°C ~ 70°C

Gate Charge (Qg) (Max) @ Vgs :

106 nC @ 15 V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Base Part Number :

ICS9DB108

Minimum Operating Temperature :

- 55 C