G3R160MT12D
- Mfr.Part #
- G3R160MT12D
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- QFN
- Datasheet
- Download
- Description
- SIC MOSFET N-CH 22A TO247-3
- Stock
- 1,716
- In Stock :
- 1,716
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- G3R
- Continuous Drain Current Id :
- 22A
- Drive Voltage (Max Rds On, Min Rds On) :
- 15V
- Maximum Operating Temperature :
- + 175 C
- Channel Type :
- N Channel
- FET Type :
- N-Channel
- Type :
- Clock Oscillator
- Operating Supply Voltage (Min) :
- 2.25(V)
- Operating Temp Range :
- -20C to 70C
- Input Capacitance (Ciss) (Max) @ Vds :
- 730 pF @ 800 V
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Technology :
- SiC
- Packaging :
- Bulk
- Transistor Type :
- MOSFET
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Mounting Style :
- Through Hole
- Vgs (Max) :
- ±15V
- Product Status :
- Active
- Product :
- MOSFET
- Package / Case :
- QFN
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Operating Supply Voltage (Max) :
- 3.63(V)
- Configuration :
- Single
- Power Dissipation (Max) :
- 123W (Tc)
- Number of Channels :
- 1 Channel
- Standard Frequency :
- 25
- Gate Charge (Qg) (Max) @ Vgs :
- 28 nC @ 15 V
- Power Dissipation :
- 123W
- Product Type :
- MOSFET
- Programmable :
- No
- Frequency Stability :
- ±25(ppm)
- RoHS :
- Details
- Base Product Number :
- G3R160
- Drain to Source Voltage (Vdss) :
- 1200 V
- Product Category :
- MOSFET
- Brand :
- GeneSiC Semiconductor
- Symmetry Max :
- 55(%)
- Rise Time :
- 9 ns
- Manufacturer :
- GeneSiC Semiconductor
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Vgs(th) (Max) @ Id :
- 2.69V @ 5mA
- Current - Continuous Drain (Id) @ 25°C :
- 22A (Tc)
- Supplier Device Package :
- TO-247-3
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 192mOhm @ 10A, 15V
- Datasheets
- G3R160MT12D
SiC N-Channel Bulk 192mOhm @ 10A, 15V ±15V 730 pF @ 800 V 28 nC @ 15 V 1200 V QFN
G3R160MT12D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 730 pF @ 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200 V.
G3R160MT12D Features
a 1200 V drain to source voltage (Vdss)
G3R160MT12D Applications
There are a lot of GeneSiC Semiconductor
G3R160MT12D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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