G3R12MT12K

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

1200 V

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Manufacturer :

GeneSiC Semiconductor

Input Capacitance (Ciss) (Max) @ Vds :

9335 pF @ 800 V

Rds On (Max) @ Id, Vgs :

13mOhm @ 100A, 18V

Vgs (Max) :

+22V, -10V

Product Status :

Active

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

157A (Tc)

Vgs(th) (Max) @ Id :

2.7V @ 50mA

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

15V, 18V

Minimum Operating Temperature :

- 55 C

FET Feature :

-

Maximum Operating Temperature :

+ 175 C

Series :

-

Power Dissipation (Max) :

567W (Tc)

Product Category :

MOSFET

FET Type :

N-Channel

Package :

Tube

Product Type :

MOSFET

Package / Case :

TO-247-4

Mounting Type :

Through Hole

Base Product Number :

G3R12M

Supplier Device Package :

TO-247-4

Gate Charge (Qg) (Max) @ Vgs :

288 nC @ 15 V

Product :

MOSFET

Brand :

GeneSiC Semiconductor

Channel Mode :

Enhancement

RoHS :

Details