G2R120MT33J

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Product :

MOSFET

Power Dissipation :

402W

Subcategory :

MOSFETs

Operating Temperature :

-55°C ~ 175°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

35A

Channel Type :

N Channel

Package :

Tube

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Brand :

GeneSiC Semiconductor

Power Dissipation (Max) :

-

Rise Time :

26 ns

Supplier Device Package :

TO-263-7

Product Category :

MOSFET

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

-

Manufacturer :

GeneSiC Semiconductor

Maximum Operating Temperature :

+ 175 C

Configuration :

Single

Transistor Type :

MOSFET

Rds On (Max) @ Id, Vgs :

156mOhm @ 20A, 20V

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

RoHS :

Details

Vgs (Max) :

+25V, -10V

Series :

G2R?

Packaging :

Tube

Product Status :

Active

Drain to Source Voltage (Vdss) :

3300 V

Type :

SiC MOSFET

FET Feature :

-

Continuous Drain Current Id :

35A

Drive Voltage (Max Rds On, Min Rds On) :

20V

Number of Channels :

1 Channel

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3706 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs :

145 nC @ 20 V

Channel Mode :

Enhancement

Base Product Number :

G2R120

Mounting Type :

Surface Mount