G2R1000MT17D
- Mfr.Part #
- G2R1000MT17D
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- QFN
- Datasheet
- Download
- Description
- SIC MOSFET N-CH 4A TO247-3
- Stock
- 8,399
- In Stock :
- 8,399
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation :
- 53W
- Product :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 1700 V
- Channel Mode :
- Enhancement
- RoHS :
- Details
- Operating Supply Voltage (Min) :
- 2.25(V)
- Standard Frequency :
- 148.35
- Configuration :
- Single
- Package :
- Tube
- Series :
- G2R
- Mounting Style :
- Through Hole
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- FET Feature :
- -
- Package / Case :
- QFN
- Base Product Number :
- G2R1000
- Channel Type :
- N Channel
- Vgs (Max) :
- +20V, -5V
- Programmable :
- No
- Symmetry Max :
- 55(%)
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 2A, 20V
- Manufacturer :
- GeneSiC Semiconductor
- Operating Temp Range :
- -20C to 70C
- Operating Supply Voltage (Max) :
- 2.75(V)
- Load Capacitance :
- 15(pF)
- Rise Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- Frequency Stability :
- ±20(ppm)
- Number of Channels :
- 1 Channel
- Subcategory :
- MOSFETs
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- Supplier Device Package :
- TO-247-3
- Power Dissipation (Max) :
- 53W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 139 pF @ 1000 V
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Maximum Operating Temperature :
- + 175 C
- Continuous Drain Current Id :
- 4A
- Product Status :
- Active
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Type :
- Clock Oscillator
- Brand :
- GeneSiC Semiconductor
- Packaging :
- Bulk
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Datasheets
- G2R1000MT17D
SiC N-Channel Bulk 1.2Ohm @ 2A, 20V +20V, -5V 139 pF @ 1000 V 1700 V QFN
G2R1000MT17D Overview
A device's maximum input capacitance is 139 pF @ 1000 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 1700 V drain to source voltage (Vdss).
G2R1000MT17D Features
a 1700 V drain to source voltage (Vdss)
G2R1000MT17D Applications
There are a lot of GeneSiC Semiconductor
G2R1000MT17D applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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