FQU6N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.2A, 10V

Drain Current-Max (Abs) (ID) :

4.4A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

1Ohm

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 45W Tc

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

75 mJ

Number of Elements :

1

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

17.6A

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material :

SILICON

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

250V

Drain to Source Voltage (Vdss) :

250V