FQU6N25TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.2A, 10V

Terminal Finish :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

75 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Power Dissipation-Max :

2.5W Ta 45W Tc

DS Breakdown Voltage-Min :

250V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

17.6A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Qualification Status :

COMMERCIAL

Terminal Position :

Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

1Ohm

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Pin Count :

3

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

4.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED