FQT7N10TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Case Connection :

DRAIN

Fall Time (Typ) :

19 ns

Mounting Type :

Surface Mount

Threshold Voltage :

4V

Vgs (Max) :

±25V

Lead Free :

Lead Free

Terminal Position :

Dual

Current Rating :

-1A

Pbfree Code :

yes

Published :

2001

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

50 mJ

Turn-Off Delay Time :

13 ns

Rise Time :

24ns

Resistance :

350mOhm

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

7 ns

Height :

1.7mm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-261-4, TO-261AA

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-100V

Length :

6.7mm

FET Type :

N-Channel

Weight :

188mg

Mount :

Surface Mount

ECCN Code :

EAR99

Width :

3.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Factory Lead Time :

17 Weeks

Element Configuration :

Single

Power Dissipation-Max :

2W Tc

Pulsed Drain Current-Max (IDM) :

6.8A

Continuous Drain Current (ID) :

1.7A