FQT7N10TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-100V

Case Connection :

DRAIN

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Position :

Dual

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

19 ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Power Dissipation :

2W

Factory Lead Time :

17 Weeks

Pbfree Code :

yes

Published :

2001

Avalanche Energy Rating (Eas) :

50 mJ

Number of Pins :

3

Turn-Off Delay Time :

13 ns

JESD-30 Code :

R-PDSO-G4

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Height :

1.7mm

Length :

6.7mm

Element Configuration :

Single

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Threshold Voltage :

4V

Continuous Drain Current (ID) :

1.7A

Current Rating :

-1A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Weight :

188mg

Pulsed Drain Current-Max (IDM) :

6.8A

Series :

QFET®

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

24ns

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

Power Dissipation-Max :

2W Tc

Resistance :

350mOhm

Number of Elements :

1