FQT7N10TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

350mOhm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Length :

6.7mm

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

Width :

3.7mm

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Current Rating :

-1A

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Published :

2001

Series :

QFET®

Weight :

188mg

Fall Time (Typ) :

19 ns

Turn-Off Delay Time :

13 ns

Height :

1.7mm

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

50 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Pbfree Code :

yes

Mount :

Surface Mount

Continuous Drain Current (ID) :

1.7A

Element Configuration :

Single

Voltage - Rated DC :

-100V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Mounting Type :

Surface Mount

Power Dissipation :

2W

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Number of Pins :

3

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

2W Tc

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

Rise Time :

24ns

Pulsed Drain Current-Max (IDM) :

6.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

17 Weeks

Terminal Position :

Dual

JESD-609 Code :

e3

REACH SVHC :

No SVHC