FQT7N10LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Series :

QFET®

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

Radiation Hardening :

No

Threshold Voltage :

2V

Pulsed Drain Current-Max (IDM) :

6.8A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Published :

2017

Rise Time :

100ns

Continuous Drain Current (ID) :

1.7A

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Width :

3.56mm

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Length :

6.5mm

FET Type :

N-Channel

REACH SVHC :

No SVHC

Element Configuration :

Single

Number of Channels :

1

Avalanche Energy Rating (Eas) :

50 mJ

Fall Time (Typ) :

50 ns

Current Rating :

1.7A

Height :

1.8mm

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

9 ns

Terminal Position :

Dual

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Number of Terminations :

4

Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Weight :

188mg

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

Number of Elements :

1

Number of Pins :

3

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transistor Application :

SWITCHING

Resistance :

350mOhm

Turn-Off Delay Time :

17 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2W Tc

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V