FQT7N10LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Weight :

188mg

Voltage - Rated DC :

100V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

Turn-Off Delay Time :

17 ns

Height :

1.8mm

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

350m Ω @ 850mA, 10V

Pulsed Drain Current-Max (IDM) :

6.8A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Turn On Delay Time :

9 ns

Power Dissipation-Max :

2W Tc

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Fall Time (Typ) :

50 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-30 Code :

R-PDSO-G4

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.7A

Radiation Hardening :

No

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

Number of Pins :

3

Length :

6.5mm

Contact Plating :

Tin

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Published :

2017

Number of Channels :

1

Current Rating :

1.7A

Power Dissipation :

2W

Terminal Form :

Gull wing

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Package / Case :

TO-261-4, TO-261AA

Element Configuration :

Single

Case Connection :

DRAIN

Width :

3.56mm

Rise Time :

100ns

Avalanche Energy Rating (Eas) :

50 mJ

Resistance :

350mOhm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount