FQI9N50TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

360 mJ

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Pbfree Code :

yes

Surface Mount :

No

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Drain Current-Max (Abs) (ID) :

9A

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Drain-source On Resistance-Max :

0.73Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Terminations :

3

Reach Compliance Code :

Unknown

Series :

QFET®

Power Dissipation-Max :

3.13W Ta 147W Tc

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.5A, 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

36A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable