FQI9N50CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

Not Applicable

Reach Compliance Code :

Unknown

Terminal Position :

Single

Number of Terminations :

3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain-source On Resistance-Max :

0.8Ohm

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.03pF @ 25V

Avalanche Energy Rating (Eas) :

360 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

135W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

JESD-609 Code :

e3

Surface Mount :

No

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

9A

Pin Count :

3

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Pulsed Drain Current-Max (IDM) :

36A

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Qualification Status :

COMMERCIAL