FQH140N10
- Mfr.Part #
- FQH140N10
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 140A TO247-3
- Stock
- 29,278
- In Stock :
- 29,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 375W Tc
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 7.9pF @ 25V
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Series :
- QFET®
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 140A
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 70A, 10V
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 100V
- Drain to Source Voltage (Vdss) :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Unknown
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Vgs (Max) :
- ±25V
- Drain-source On Resistance-Max :
- 0.01Ohm
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 560A
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- Datasheets
- FQH140N10

N-Channel Tube 10m Ω @ 70A, 10V ±25V 7.9pF @ 25V 285nC @ 10V 100V TO-247-3
FQH140N10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7.9pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [140A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 560A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQH140N10 Features
the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 560A.
a 100V drain to source voltage (Vdss)
FQH140N10 Applications
There are a lot of Rochester Electronics, LLC
FQH140N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQH140N10 | Fairchild Semiconductor | 10,679 | MOSFET N-CH 100V 140A TO247-3 |
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| FQH18N50V2 | Fairchild Semiconductor | 10,571 | MOSFET N-CH 500V 20A TO247-3 |
















