FQH140N10

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Mfr.Part #
FQH140N10
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 140A TO247-3
Stock
10,679
In Stock :
10,679

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
Drain-source On Resistance-Max :
0.01Ohm
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Pulsed Drain Current-Max (IDM) :
560A
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-PSFM-T3
FET Type :
N-Channel
DS Breakdown Voltage-Min :
100V
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
Unknown
Terminal Position :
Single
Package / Case :
TO-247-3
JESD-609 Code :
e3
Qualification Status :
COMMERCIAL
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
10m Ω @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C :
140A Tc
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
Not Applicable
Vgs (Max) :
±25V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
375W Tc
Input Capacitance (Ciss) (Max) @ Vds :
7.9pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
285nC @ 10V
Transistor Application :
SWITCHING
Pin Count :
3
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
1500 mJ
Series :
QFET®
Drain Current-Max (Abs) (ID) :
140A
Surface Mount :
No
Packaging :
Tube
Introducing Transistors - FETs, MOSFETs - Single onsemi FQH140N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, FQH140N10 pinout, FQH140N10 datasheet PDF, FQH140N10 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQH140N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQH140N10


N-Channel Tube 10m Ω @ 70A, 10V ±25V 7.9pF @ 25V 285nC @ 10V 100V TO-247-3

FQH140N10 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7.9pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [140A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 560A.The DS breakdown voltage should be maintained above 100V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQH140N10 Features


the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 560A.
a 100V drain to source voltage (Vdss)


FQH140N10 Applications


There are a lot of Rochester Electronics, LLC
FQH140N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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