FQH140N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

7.9pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Transistor Element Material :

SILICON

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1500 mJ

Vgs (Max) :

±25V

Number of Terminations :

3

Power Dissipation-Max :

375W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

10m Ω @ 70A, 10V

Drain to Source Voltage (Vdss) :

100V

Series :

QFET®

Terminal Position :

Single

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

560A

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

140A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-609 Code :

e3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.01Ohm

Packaging :

Tube