FQD9N25TM-F080

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

165 mJ

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

29.6A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.7A, 10V

Power Dissipation-Max :

2.5W Ta 55W Tc

Vgs (Max) :

±30V

Number of Elements :

1

Turn On Delay Time :

13 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Turn-Off Delay Time :

25 ns

Number of Pins :

3

Drain-source On Resistance-Max :

0.42Ohm

Power Dissipation :

2.5W

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AB

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rise Time :

105ns

Series :

QFET®

Gate to Source Voltage (Vgs) :

30V

Weight :

260.37mg

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Fall Time (Typ) :

45 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.4A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

250V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING