FQD9N25TM
- Mfr.Part #
- FQD9N25TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 7.4A DPAK
- Stock
- 3,750
- In Stock :
- 3,750
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Fall Time (Typ) :
- 45 ns
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 13 ns
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 260.37mg
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 29.6A
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 25 ns
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 250V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 7.4A
- Factory Lead Time :
- 4 Weeks
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Rise Time :
- 105ns
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 2.5W Ta 55W Tc
- Drain-source On Resistance-Max :
- 0.42Ohm
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 3.7A, 10V
- Voltage - Rated DC :
- 250V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 2.5W
- Threshold Voltage :
- 5V
- Pbfree Code :
- yes
- Series :
- QFET®
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 2
- Current Rating :
- 7.4A
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- FQD9N25TM

N-Channel Tape & Reel (TR) 420m Ω @ 3.7A, 10V ±30V 700pF @ 25V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD9N25TM Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 29.6A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FQD9N25TM Features
a continuous drain current (ID) of 7.4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 29.6A.
a threshold voltage of 5V
FQD9N25TM Applications
There are a lot of ON Semiconductor
FQD9N25TM applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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