FQD9N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Fall Time (Typ) :

45 ns

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

7.4A

ECCN Code :

EAR99

Vgs (Max) :

±30V

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 55W Tc

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Turn-Off Delay Time :

25 ns

Voltage - Rated DC :

250V

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

5V

Pulsed Drain Current-Max (IDM) :

29.6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

250V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.42Ohm

Transistor Element Material :

SILICON

Number of Pins :

3

Case Connection :

DRAIN

Current Rating :

7.4A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.7A, 10V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Rise Time :

105ns

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Power Dissipation :

2.5W

FET Type :

N-Channel