FPN530
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- Mfr.Part #
- FPN530
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TO226
- Stock
- 17,409
- In Stock ：
- 17,409
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-226
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Power - Max :
- 1W
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector (Ic) (Max) :
- 3A
- Datasheets
- FPN530
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
FPN530 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.When VCE saturation is 300mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-226 contains the product.The device has a 30V maximal voltage - Collector Emitter Breakdown.
FPN530 Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 300mV @ 100mA, 1A
the supplier device package of TO-226
FPN530 Applications
There are a lot of ON Semiconductor
FPN530 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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