FMM22-06PF

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Arrays

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Product Status :

Active

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

RoHS :

Details

FET Feature :

Standard

Reach Compliance Code :

Compliant

Surface Mount :

No

Input Capacitance :

3.6 nF

Pin Count :

5

Factory Lead Time :

30 Weeks

FET Type :

2 N-Channel (Dual)

Supplier Device Package :

ISOPLUS i4-PAC™

Number of Elements :

2

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

1000 mJ

Continuous Drain Current (ID) :

12A

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Number of Terminals :

5

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On Max :

350 mΩ

Power Dissipation-Max (Abs) :

130 W

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Power - Max :

130W

Pbfree Code :

yes

Base Part Number :

FMM

Transistor Polarity :

N-Channel

Base Product Number :

FMM22

Pulsed Drain Current-Max (IDM) :

66A

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

12 A

Package :

Tube

Technology :

Si

Vgs(th) (Max) @ Id :

5V @ 1mA

JESD-30 Code :

R-PSIP-T5

Maximum Operating Temperature :

+ 150 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Mount :

Through Hole

Drain-source On Resistance-Max :

0.35 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

i4-Pac™-5

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A

Max Power Dissipation :

130W

Product Category :

MOSFET

Rise Time :

20 ns

Transistor Type :

2 N-Channel

Number of Terminations :

5

Mounting Style :

Through Hole

Series :

HiPerFET™, PolarHT™

Number of Channels :

2 Channel

DS Breakdown Voltage-Min :

600V

Published :

2008

Rds On (Max) @ Id, Vgs :

350m Ω @ 11A, 10V

Drain to Source Voltage (Vdss) :

600V

Brand :

IXYS

Number of Pins :

5

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V