FMM150-0075X2F
- Mfr.Part #
- FMM150-0075X2F
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUSi5-Pak™
- Datasheet
- Download
- Description
- MOSFET 2N-CH 75V 120A I4-PAC-5
- Stock
- 12,662
- In Stock :
- 12,662
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- ISOPLUSi5-Pak™
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Technology :
- Si
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Manufacturer :
- IXYS
- Base Product Number :
- FMM150
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 500A
- Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 120A
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Power - Max :
- 170W
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 5
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.0058ohm
- JESD-609 Code :
- e1
- Supplier Device Package :
- ISOPLUS i4-PAC™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 100A, 10V
- Rise Time :
- 18 ns
- Drain Current-Max (Abs) (ID) :
- 120 A
- Avalanche Energy Rating (Eas) :
- 850 mJ
- Series :
- HiPerFET™, TrenchT2™
- DS Breakdown Voltage-Min :
- 75V
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 178nC @ 10V
- Number of Elements :
- 2
- Product Category :
- MOSFET
- Product Type :
- MOSFET
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 75V
- Brand :
- IXYS
- JESD-30 Code :
- R-PSIP-T5
- Number of Terminations :
- 5
- Power Dissipation :
- 170W
- FET Feature :
- Standard
- Power Dissipation-Max (Abs) :
- 170 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 175 C
- Max Power Dissipation :
- 170W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- Isolated
- Transistor Polarity :
- N-Channel
- Pin Count :
- 5
- Published :
- 2009
- Mount :
- Through Hole
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 120A
- Datasheets
- FMM150-0075X2F

FMM150-0075X2F datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IXYS stock available at
FMM150-0075X2F Description
HiperFET TrenchT2TM N-Channel Power MOSFET
FMM150-0075X2F Features
-
The Avalanche
-
Low QG
-
Low Capacitance from Drain to Tab
-
Package Inductance is Low
FMM150-0075X2F Applications
-
Converters, DC-DC
-
chargeable batteries
-
Power Supplies in Resonant and Switched Modes
-
Choppers DC
-
Drives for AC motors
-
Discontinuous Power Systems
-
Applications for High Speed Power Switching
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