FMM110-015X2F
- Mfr.Part #
- FMM110-015X2F
- Manufacturer
- Littelfuse
- Package / Case
- i4-Pac™-5
- Datasheet
- Download
- Description
- MOSFET 2N-CH 150V 53A I4-PAC
- Stock
- 48,626
- In Stock :
- 48,626
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 53A
- Published :
- 2009
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Width :
- 5.21 mm
- Drain to Source Voltage (Vdss) :
- 150V
- Manufacturer :
- IXYS
- Number of Terminations :
- 5
- FET Feature :
- Standard
- Pulsed Drain Current-Max (IDM) :
- 300A
- JESD-609 Code :
- e1
- Product Category :
- MOSFET
- Number of Channels :
- 2 Channel
- Technology :
- Si
- Number of Terminals :
- 5
- ECCN Code :
- EAR99
- Number of Elements :
- 2
- Transistor Polarity :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 800 mJ
- JESD-30 Code :
- R-PSIP-T5
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 55A, 10V
- Mounting Style :
- Through Hole
- Height :
- 21.34 mm
- Supplier Device Package :
- ISOPLUS i4-PAC™
- Base Product Number :
- FMM110
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Type :
- TrenchT2 HiperFET N-Channel Power MOSFET
- Mount :
- Through Hole
- Packaging :
- Tube
- Package :
- Tube
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 180W
- Terminal Position :
- Single
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- TrenchT2
- FET Type :
- 2 N-Channel (Dual)
- Drain Current-Max (Abs) (ID) :
- 53 A
- Input Capacitance :
- 8.6 nF
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 180 W
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 16 ns
- Number of Pins :
- 5
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 150 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On Max :
- 20 mΩ
- RoHS :
- Details
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Length :
- 20.29 mm
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Product Type :
- MOSFET
- Package / Case :
- i4-Pac™-5
- Base Part Number :
- FMM
- Continuous Drain Current (ID) :
- 53A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 180W
- Pin Count :
- 5
- Maximum Operating Temperature :
- + 175 C
- Transistor Type :
- 2 N-Channel
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.02Ohm
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Brand :
- IXYS
- Datasheets
- FMM110-015X2F
FMM110-015X2F datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IXYS stock available at
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