FMBM5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Width :

1.68mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

160V

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

180V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Mount :

Surface Mount

ECCN Code :

EAR99

Contact Plating :

Tin

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

160V

Emitter Base Voltage (VEBO) :

6V

Gain Bandwidth Product :

300MHz

Height :

1.12mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Number of Terminations :

6

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

150mV

Current Rating :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Voltage - Rated DC :

160V

Current - Collector Cutoff (Max) :

50nA ICBO

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency :

300MHz

Weight :

36mg

Published :

2008

Length :

3mm

Power Dissipation :

700mW

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

JESD-609 Code :

e3

Element Configuration :

Dual

Max Power Dissipation :

700mW

Max Collector Current :

600mA

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Max Breakdown Voltage :

160V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

AMPLIFIER

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

FMBM5551

Transition Frequency :

100MHz

Number of Pins :

6

Number of Elements :

2