FMB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Base Part Number :

FMB5551

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50nA ICBO

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Width :

1.68mm

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

160V

ECCN Code :

EAR99

Max Collector Current :

600mA

Current Rating :

600mA

Height :

1.12mm

Collector Emitter Saturation Voltage :

200mV

Number of Terminations :

6

Transition Frequency :

100MHz

Frequency :

300MHz

Max Power Dissipation :

700mW

Published :

2004

Number of Pins :

6

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Length :

3mm

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Weight :

36mg

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

180V

Mount :

Surface Mount

hFE Min :

80

Factory Lead Time :

4 Weeks

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

160V

Element Configuration :

Dual

Transistor Type :

2 NPN (Dual)

JESD-609 Code :

e3

Number of Elements :

2

Power Dissipation :

700mW

Collector Emitter Breakdown Voltage :

160V

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

300MHz

Mounting Type :

Surface Mount