FMB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

160V

Collector Base Voltage (VCBO) :

180V

Base Part Number :

FMB5551

Number of Pins :

6

Voltage - Rated DC :

160V

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

160V

Frequency :

300MHz

Width :

1.68mm

Element Configuration :

Dual

Factory Lead Time :

4 Weeks

Max Collector Current :

600mA

Current - Collector Cutoff (Max) :

50nA ICBO

Height :

1.12mm

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Number of Elements :

2

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Finish :

Tin (Sn)

Operating Temperature :

150°C TJ

Max Power Dissipation :

700mW

Pbfree Code :

yes

Power Dissipation :

700mW

ECCN Code :

EAR99

Weight :

36mg

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

hFE Min :

80

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Length :

3mm

Lead Free :

Lead Free

Polarity :

NPN

Radiation Hardening :

No

Gain Bandwidth Product :

300MHz

Published :

2004

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

200mV

Transition Frequency :

100MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current Rating :

600mA