FMB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

hFE Min :

80

Max Power Dissipation :

700mW

Current - Collector Cutoff (Max) :

50nA ICBO

Base Part Number :

FMB5551

Emitter Base Voltage (VEBO) :

6V

Width :

1.68mm

Collector Emitter Voltage (VCEO) :

160V

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Terminations :

6

Mount :

Surface Mount

Mounting Type :

Surface Mount

Element Configuration :

Dual

Voltage - Rated DC :

160V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

2

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Transistor Type :

2 NPN (Dual)

Published :

2004

Weight :

36mg

Collector Emitter Breakdown Voltage :

160V

Transition Frequency :

100MHz

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Packaging :

Tape and Reel (TR)

Current Rating :

600mA

Height :

1.12mm

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

200mV

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Collector Current :

600mA

Frequency :

300MHz

Gain Bandwidth Product :

300MHz

Collector Base Voltage (VCBO) :

180V

ECCN Code :

EAR99

Number of Pins :

6

Radiation Hardening :

No

Length :

3mm

Polarity :

NPN

Power Dissipation :

700mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)