FMB200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

28 Weeks

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Polarity :

PNP

Gain Bandwidth Product :

300MHz

Voltage - Rated DC :

-45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Length :

3mm

Collector Emitter Breakdown Voltage :

45V

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

LIFETIME (Last Updated: 5 days ago)

Emitter Base Voltage (VEBO) :

-6V

Current - Collector Cutoff (Max) :

50nA

Current Rating :

-500mA

Max Breakdown Voltage :

45V

Transition Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Power Dissipation :

700mW

Mount :

Surface Mount

Radiation Hardening :

No

hFE Min :

100

Base Part Number :

FMB200

Element Configuration :

Dual

Max Power Dissipation :

700mW

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Frequency :

300MHz

Collector Base Voltage (VCBO) :

-60V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

400mV

Pbfree Code :

yes

Published :

2017

Lead Free :

Lead Free

Width :

1.7mm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Terminations :

6

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 PNP (Dual)

Weight :

36mg

Height :

1mm

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

45V

JESD-609 Code :

e3

Max Collector Current :

500mA

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6