FJX2907ATF
- Mfr.Part #
- FJX2907ATF
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SC70
- Stock
- 10,537
- In Stock :
- 10,537
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 600mA
- Turn On Time-Max (ton) :
- 45ns
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Width :
- 1.25mm
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- PNP
- Max Power Dissipation :
- 325mW
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Length :
- 2mm
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Height :
- 900μm
- Collector Base Voltage (VCBO) :
- -60V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- FJX2907
- Current Rating :
- -600mA
- Voltage - Rated DC :
- -60V
- Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Published :
- 2002
- Collector Emitter Saturation Voltage :
- -1.6V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e3
- Transition Frequency :
- 200MHz
- Power Dissipation :
- 325mW
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- FJX2907ATF

PNP 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX2907ATF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, which allows for maximum design flexibility.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
FJX2907ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
FJX2907ATF Applications
There are a lot of ON Semiconductor
FJX2907ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJX2907ATF | onsemi | 10,537 | TRANS PNP 60V 0.6A SC70 |
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