FJX1182YTF
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- Mfr.Part #
- FJX1182YTF
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SOT323
- Stock
- 29,829
- In Stock ：
- 29,829
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -500mA
- Collector Base Voltage (VCBO) :
- -35V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2014
- Max Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -100mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- -30V
- Base Part Number :
- FJX1182
- Power Dissipation :
- 150mW
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 200MHz
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- hFE Min :
- 70
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- FJX1182YTF
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
FJX1182YTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -100mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FJX1182YTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
FJX1182YTF Applications
There are a lot of ON Semiconductor
FJX1182YTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJX1182OTF | onsemi | 32,519 | TRANS PNP 30V 0.5A SOT323 |
| FJX1182YTF | onsemi | 28,254 | TRANS PNP 30V 0.5A SC70 |
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