FJI5603DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

100W

Polarity/Channel Type :

NPN

Frequency :

5MHz

Current - Collector Cutoff (Max) :

100μA

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

12V

Transition Frequency :

5MHz

Collector Emitter Breakdown Voltage :

800V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-609 Code :

e3

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

800V

Radiation Hardening :

No

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Published :

2014

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 200mA, 1A

Mounting Type :

Through Hole

Number of Elements :

1

Weight :

2.084g

Max Power Dissipation :

100W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

hFE Min :

20

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

5MHz

Transistor Element Material :

SILICON

Element Configuration :

Single

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

1.6kV

Packaging :

Tube

Max Collector Current :

3A