FJE5304DTU
- Mfr.Part #
- FJE5304DTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO126-3
- Stock
- 1,904
- In Stock :
- 1,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Min Operating Temperature :
- -65°C
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Emitter Base Voltage (VEBO) :
- 12V
- Max Power Dissipation :
- 30W
- Mount :
- Through Hole
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 2.5A
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-225AA, TO-126-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Max Operating Temperature :
- 150°C
- Weight :
- 761mg
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- Collector Base Voltage (VCBO) :
- 700V
- Voltage - Rated DC :
- 400V
- Pbfree Code :
- yes
- Current Rating :
- 4A
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 8
- Current - Collector Cutoff (Max) :
- 100μA
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation :
- 30W
- Published :
- 2017
- Collector Emitter Breakdown Voltage :
- 400V
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Datasheets
- FJE5304DTU

NPN 100μA 1 Elements 3 Terminations NPN TO-225AA, TO-126-3 Tube Through Hole
FJE5304DTU Overview
In this device, the DC current gain is 8 @ 2A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 2.5A.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
FJE5304DTU Features
the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A
FJE5304DTU Applications
There are a lot of ON Semiconductor
FJE5304DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJE5304D | onsemi | 5,315 | TRANS NPN 400V 4A TO126-3 |
| FJE5304D | onsemi | 5,315 | TRANS NPN 400V 4A TO126-3 |
| FJE5304DTU | onsemi | 1,904 | TRANS NPN 400V 4A TO126-3 |
| FJE5304DTU | onsemi | 1,904 | TRANS NPN 400V 4A TO126-3 |
















