FJB3307DTM
- Mfr.Part #
- FJB3307DTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock :
- 6,670
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 8A
- ECCN Code :
- EAR99
- hFE Min :
- 8
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.72W
- Max Breakdown Voltage :
- 400V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 700V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 3V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 8A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width :
- 9.65mm
- Base Part Number :
- FJB3307
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400V
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 1.72W
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 400V
- Published :
- 2012
- Height :
- 4.83mm
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Max Frequency :
- 1MHz
- Length :
- 10.67mm
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Weight :
- 1.31247g
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Datasheets
- FJB3307DTM
FJB3307DTM Documents

NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
















