FJB102TM
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- Mfr.Part #
- FJB102TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A D2PAK
- Stock
- 13,611
- In Stock ：
- 13,611
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Current Rating :
- 8A
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 100V
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Published :
- 2014
- Transistor Type :
- NPN - Darlington
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Weight :
- 1.31247g
- Number of Pins :
- 3
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 8A
- Mounting Type :
- Surface Mount
- Base Part Number :
- FJB102
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 80W
- Current - Collector Cutoff (Max) :
- 50μA
- Power Dissipation :
- 80W
- Packaging :
- Tape and Reel (TR)
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJB102TM
FJB102TM Documents
NPN - Darlington 150°C TJ 50μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB102TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
FJB102TM Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
FJB102TM Applications
There are a lot of ON Semiconductor
FJB102TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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